功能材料的制备及物理、化学特性研究

　　主持或参加科研项目及人才计划项目情况：

　　1. 国家重点研发项目，“多主相钕铁硼磁体重稀土极致应用关键技术研究”，批准号：2021YFB3500100，起止年月：2021.12-2025.11，102万，课题负责人。

　　2. 国家基金面上项目，“拓扑绝缘体薄膜光电材料设计、特性及机理研究”，批准号：51971220，起止年月：2020.01-2023.12，60万，主持。

　　3. 国家优秀青年基金，“磁性对拓扑绝缘体薄膜特性调控”，批准号：51522104，起止年月：2016.1-2018.12，150万，主持。

　　4. 国家自然科学基金，51102244，碳包覆磁性半导体氧化锌纳米胶囊的制备及微波吸收性能的研究，2012/01-2014/12，25万，结题，主持。

　　5. 沈阳市自然科学基金，F10-205-1-54，Cr掺杂MnTe基铁磁性半导体薄膜的优化生长和研究，2010/05-2012/12，10万，结题，主持。

　　6. 国家重点项目，“金属间化合物体系外场驱动的多卡效应和相关科学问题研究”，批准号：51531008，起止年月：2016.5-2020.12，134.7万，骨干。

　　7. 国家重大研究计划课题，2010CB934603，纳米复合磁性薄膜材料的结构及磁性研究，2010/01-2014/12，结题，主要骨干成员。

　　8. 国家自然科学重点基金，51331006，金属磁性材料的拓扑结构与电磁性能，2014/01-2018/12，进行中，主要骨干成员。

　　9. 国家自然科学重点基金，50831006，新型过渡金属化合物的磁输运特性、机理和结构嬗变，2009/01-2012/12，结题，主要骨干成员。

　　“拓扑绝缘体纳米结构的输运性质”获得中国科学院金属研究所2014年度科技创新奖（基础类，唯一获奖者）；

　　“拓扑绝缘体中不饱和线性磁电阻”入选沈阳材料科学国家（联合）实验室2014年度代表性成果。

（2013年以来发表论文目录）

1. D. Han, J. Qi, Y.K. Huang, Z.H. Wang*, B. Li, Z.D. Zhang, “Anisotropic magnetoelectric transport in AgCrSe2 single crystals”, Appl. Phys. Lett. 121 (2022), 182405.

2. M.Z. Li, Z.H. Wang*, X. P.A. Gao, and Z.D. Zhan, “Broadband and Fast Response Photodetectors Based on Vertically Oriented Topological Insulator Sb2Te3 Nanoplates-Silicon Heterostructure”, Journal of Solid State Chemistry 315 (2022) 123506.

3. Z.M. Dai, K. Li, Z.H. Wang*, W. Liu, and Z.D. Zhang, “Magnetic properties assessment on Dy-Nd-Fe-B permanent magnet by thermodynamic calculation and micromagnetic simulation”, Materials 15 (2022), 7648.

4. D. Han, Z.H. Wang*, Xuan P.A. Gao, Z.D. Zhang, “Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films”, Cryst. Growth Des. 21 (2021) 608？616.

5. L.N. Wei, Z.H. Wang*, Z.D. Zhang, C.W. Liu, and Xuan P. A. Gao, “Enhanced linear magneto-resistance near the dirac point in topological insulator Bi2(Te1-xSex)3 nanowires”, Nano Research, 13(5) (2020) 1332-1338.

6. M.Z. Li, Z.H. Wang*, Xuan P.A. Gao, Z.D. Zhang, “Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection”, Journal of Physical Chemistry C, 124 (2020) 10135-10142.

7. C.W. Liu, Z.H. Wang(共一) , Richard L.J. Qiu, Xuan P.A. Gao, “Development of topological insulator and topological crystalline insulator nanostructures”, Nanotechnology, 31 (2020) 192001(17pages) topical review.

8. Z.H. Wang*, M.Z. Li, X. P.A. Gao and Z.D. Zhang, “Broadband photodetection of nanostructured GeSe films”, ACS Applied Electronic Materials, 1(11) (2019) 2236-2243.

9. L. Yang, Z.H. Wang*, M.Z. Li, X. P.A. Gao and Z.D. Zhang, “Dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films”, Nanoscale Adv. 1 (2019) 2303.

10. M.Z. Li, Z.H. Wang*, L. Yang, Xuan P.A. Gao*, Z.D. Zhang, “Linear magnetoresistance and temperature-independent magnetoresistance in Cu and Cr doped topological insulator Bi2Se3 films”, J. Phys. Chem. Solids 128 (2019) 331–336.

11. Z.H. Wang*, X. P. A. Gao, and Z.D. Zhang, “Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures” (TOPICAL REVIEW), Chin. Phys. B, 2018, 27, 10790.

12. M.Z. Li, Z.H. Wang,* L. Yang, D.S. Pan, D. Li, X. P. A. Gao and Z.D. Zhang, “Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates”, Nanotechnology 2018, 29, 315706.

13. Z.T. Zhang, Z.H. Wang*, and Z.D. Zhang, “Magneto-transport and weak anti-localization in ferromagnetic semiconductor CrSiTe3 single crystal”, Appl. Phys. Lett. 2018, 113, 142404.

14. Z.H. Wang*, L.N Wei, M.Z. Li, Z.D. Zhang and Xuan P. A. Gao, “Magnetic field modulated weak localization and antilocalization state in Bi2(TexSe1-x)3 films”, Phys. Status Solidi B 2018, 255, 1800272.

15. Z.H. Wang, M.Z. Li, L. Yang, Z.D. Zhang* and X. P. A. Gao,* “Broadband Photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates”, Nano Research, 2017, 10, 1876.

16. Z.H. Wang,* L. Yang, X.T. Zhao, Z.D. Zhang and X. P. A. Gao,* “Linear magneto-resistance versus weak antilocalization effects in Bi2Te3 films”, Nano Research, 2015, 8, 2963. 

17. M.Z. Li, Z.H. Wang,* L. Yang, D. Li, Q.R. Yao, G.H. Rao, X. P.A. Gao, and Z.D. Zhang, “Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films”, Phys. Rev. B 2017, 96, 075152.

18. L. Yang, Z.H. Wang*, D. Li, Z.D. Zhang, “Transport properties of MnTe films with cracks produced in thermal cycling process”, Applied Physics A, 2017, 123. 650.

19. L. Yang, Z.H. Wang*, D. Li, Z.D. Zhang, “Nonlinear voltage-current characteristics of MnTe films with island growth”, Vacuum 2017, 140, 165.

20. Z.H. Wang, L. Yang, X.J. Li, X.T. Zhao, H.L. Wang, Z.D. Zhang* and Xuan P. A. Gao,* “Granularity controlled non-saturating linear magneto-resistance in topological insulator Bi2Te3 films”, Nano Letters  2014, 14, 6510. 

21. Z. H. Wang,* L.W. Jiang, D. Li, J.J. Jiang, S. Ma, H. Wang, D.Y. Geng, J. An, J. He, W. Liu and Z. D. Zhang, “Permittivity and permeability of Zn(Fe) nanocapsules and their microwave absorption in the 2–18 GHz range”, J. Appl. Phys. 2014, 115, 17A527. 

22. Z.H. Wang, Richard L. J. Qiu, C.H. Lee, Z.D. Zhang and Xuan P. A. Gao, “Ambipolar surface conduction in ternary topological insulator Bi2(Te1-xSex)3 nanoribbons”, ACS Nano. 2013, 7, 2126.