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6.29】Ji-Yan Dai
题目: Modulation of Transport Property at Oxide Heterostructures
 
2015-06-24 | 文章来源:固体原子像研究部        【 】【打印】【关闭

题目: Modulation of Transport Property at Oxide Heterostructures

报告人: Ji-Yan Dai

     Department of Applied Physics, The Hong Kong Polytechnic University,
     Hung Hom, Kowloon, Hong Kong, P. R. China

时间: 2015年6月29日(周一)上午900

地点: 李薰楼468房间

摘要: The discovery of the two dimensional electron gas (2DEG) at the interface between two band insulators LaAlO3 and SrTiO3 has triggered intensive researches on this system, and intriguing electronic properties have been found in this heterointerfaces and the significant results promise the potential application in the new generation of electronic devices. In this interfacial 2DEG system, the transport properties of the LAO/STO interfacial conducting states are extremely sensitive to the interfacial structure and LAO surface state, and the modulation of surface state has been shown to have a great influence on the transport properties of the interfaces. In this seminar, the LAO/STO surface modulation by means of polar liquids, metal nanoparticles, gas and strain will be reported.

报告人简介:Dai Jiyan is currently a Professor of the Department of Applied Physics at The Hong Kong Polytechnic University. Prof. Dai’s main research interests include n anomaterials fabrication and application, especially functional oxide thin films and devices. He received his B.Sc. degree in physics from Fudan University in 1988, his M.S. degree in Electronic Engineering from Tsinghua University in 1991, and his Ph.D. degree in Materials Physics from the Chinese Academy of Sciences in 1994. He has three years research experience at Northwestern University as a Research Associate, and after one year working in the Institute of Materials Research and Engineering Singapore, he joined Chartered Semiconductor Manufacturing Ltd. of Singapore in failure analysis. Since 2001, Prof. Dai has been working at the Department of Applied Physics, The Hong Kong Polytechnic University.

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