香港理工大学应用物理系戴吉岩（Ji-Yan Dai）教授应马秀良研究员的邀请，于2015年6月29日来所进行学术交流，并做了题为“Interfacial structure and electrical properties of oxide thin film heterostructures”的学术报告。

附：报告摘要及简历

Interfacial Structure and Electrical Properties Of Oxide Thin Film Heterostructures

Ji-Yan Dai

Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China

The discovery of the two dimensional electron gas (2DEG) at the interface between two band insulators LaAlO₃ and SrTiO₃ has triggered intensive researches on this system, and intriguing electronic properties have been found in this heterointerfaces and the significant results promise the potential application in the new generation of electronic devices. In this interfacial 2DEG system, the transport properties of the LAO/STO interfacial conducting states are extremely sensitive to the interfacial structure and LAO surface state, and the modulation of surface state has been shown to have a great influence on the transport properties of the interfaces. In this seminar, the LAO/STO surface modulation by means of polar liquids, metal nanoparticles, gas and strain will be reported.

Dai Jiyan is currently a Professor of the Department of Applied Physics at The Hong Kong Polytechnic University. Prof. Dai’s main research interests include nanomaterials fabrication and application, especially functional oxide thin films and devices. He received his B.Sc. degree in physics from Fudan University in 1988, his M.S. degree in Electronic Engineering from Tsinghua University in 1991, and his Ph.D. degree in Materials Physics from the Chinese Academy of Sciences in 1994. He has three years research experience at Northwestern University as a Research Associate, and after one year working in the Institute of Materials Research and Engineering Singapore, he joined Chartered Semiconductor Manufacturing Ltd. of Singapore in failure analysis. Since 2001, Prof. Dai has been working at the Department of Applied Physics, The Hong Kong Polytechnic University.